# Temperature scaling of reverse current generated in proton irradiated silicon bulk

## TL;DR

This study investigates how the temperature dependence of reverse current in highly proton-irradiated silicon diodes varies with fluence and electric field, revealing different scaling behaviors above and below depletion voltage.

## Contribution

It provides the first detailed measurement of the effective temperature scaling parameter in highly irradiated silicon, highlighting its dependence on electric field and irradiation level.

## Key findings

- $E_{eff}$ varies with fluence and electric field.
- Below depletion voltage, $E_{eff}$ is lower than above depletion.
- High fluence irradiation alters temperature scaling behavior.

## Abstract

The value of the scaling parameter $E_{\text{eff}}$ of the temperature dependence for current generated in silicon bulk is investigated for highly irradiated devices. Measurements of devices irradiated to fluences above $1 \times 10^{15} n_{\text{eq}} \text{cm}^{-2} $ have shown a different temperature scaling behaviour than devices irradiated to lower fluences. This paper presents the determination of the parameter $E_{\text{eff}}$ for diodes irradiated with protons up to fluences of $3 \times 10^{15} n_{\text{eq}} \text{cm}^{-2}$ in the bias range from $0$V to $1000$V at temperatures from $-36 ^{\circ}\text{C}$ to $0 ^{\circ}\text{C}$ at different stages of annealing. It is shown that $E_{\text{eff}}$ for highly irradiated devices depends on the applied electric field: below depletion voltage, $E_{\text{eff}}$ is observed to have a lower value than above depletion voltage