MOSFET GIDL Currentby Designing a New BTBT Model Using De-Casteljaus Algorithm

TL;DR

This paper introduces a novel Band-to-Band tunneling model for MOSFET GIDL current using De Casteljau's algorithm and Bezier curves, improving accuracy over traditional quadratic approximations.

Contribution

A new tunneling model based on De Casteljau's algorithm and Bezier curves that captures arbitrary potential barrier shapes for better GIDL current prediction.

Findings

Model verified through analytic expression of GIDL current

Improved accuracy over quadratic barrier approximations

Applicable to arbitrary potential barrier shapes

Abstract

The Band to Band tunneling probability strongly depends on the shape of the potential barrier. However, parabolic approximation of this shape is well acceptable but unfortunately significant amount of error is unavoidable by using quadratic polynomial in calculation of tunneling probability. De Casteljaus algorithm, followed by Bezier Curve can be modeled to any arbitrary shape using its Geometry Invariance Property and End points geometric property. Using this algorithm a new Band-to-Band tunneling model is designed and verified by establishing an analytic expression of Gate Induced Drain Leakage current in MOSFET.