Giant Stokes shifts in AgInS$_2$ nanocrystals with trapped charge carriers
Anvar S. Baimuratov, Irina V. Martynenko, Alexander V. Baranov,, Anatoly V. Fedorov, Ivan D. Rukhlenko, Stanislav Yu. Kruchinin

TL;DR
This paper presents a comprehensive theoretical model explaining the giant Stokes shifts in AgInS$_2$ nanocrystals by integrating electron-electron interactions, electron-phonon coupling, and defect-induced hole trapping, aligning well with experimental data.
Contribution
It introduces a unified theoretical framework combining multiple mechanisms to explain the giant Stokes shifts in AgInS$_2$ nanocrystals, which was not previously achieved.
Findings
The model accurately predicts the magnitude of the Stokes shift.
Photoluminescence arises from recombination of a non-trapped electron with a trapped hole.
Theoretical results closely match recent experimental observations.
Abstract
Nanocrystals of AgInS demonstrate giant Stokes shifts ~ 1 eV, the nature of which is still not clearly understood. We propose a theoretical model of this phenomenon bringing together several different mechanisms previously considered only separately. We take into account the contribution of electron-electron interaction with the hybrid density functional theory, as well as the renormalization of energy spectrum due to the electron-phonon coupling. Furthermore, we consider the presence of at least one point defect responsible for hole trapping and the formation of a localized polaron state. Our numerical simulations show that photoluminescence due to the recombination of a non-trapped electron and a trapped hole results in the giant Stokes shift in AgInS nanocrystal, which is in close agreement with the recent experimental results.
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Taxonomy
TopicsQuantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · nanoparticles nucleation surface interactions
