# A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

## TL;DR

This paper introduces a high-performance MoS2-based synaptic device with floating gate engineering that mimics biological synapses and demonstrates energy-efficient neuromorphic computing capabilities.

## Contribution

It presents a novel MoS2 floating gate transistor with near-ideal subthreshold swing for neuromorphic applications, showcasing features like STDP and energy efficiency.

## Key findings

- Achieved subthreshold swing of 77 mV/decade over four decades of current
- Demonstrated spike time dependent plasticity (STDP) in the device
- Showed energy-efficient operation suitable for neuromorphic systems

## Abstract

As one of the most important members of the two dimensional chalcogenide family, molybdenum disulphide (MoS2) has played a fundamental role in the advancement of low dimensional electronic, optoelectronic and piezoelectric designs. Here, we demonstrate a new approach to solid state synaptic transistors using two dimensional MoS2 floating gate memories. By using an extended floating gate architecture which allows the device to be operated at near-ideal subthreshold swing of 77 mV/decade over four decades of drain current, we have realised a charge tunneling based synaptic memory with performance comparable to the state of the art in neuromorphic designs. The device successfully demonstrates various features of a biological synapse, including pulsed potentiation and relaxation of channel conductance, as well as spike time dependent plasticity (STDP). Our device returns excellent energy efficiency figures and provides a robust platform based on ultrathin two dimensional nanosheets for future neuromorphic applications.