# Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

## TL;DR

This study investigates quantum Hall stripe phases in high-density GaAs/AlGaAs quantum wells, revealing unexpected orientation behaviors that challenge existing assumptions about the influence of carrier density and quantum confinement.

## Contribution

It demonstrates that high carrier density alone does not determine QHS orientation, highlighting the significant role of quantum confinement effects in these systems.

## Key findings

- QHSs align along <110> direction at zero in-plane magnetic field
- QHSs can be reoriented only perpendicular to in-plane magnetic field
- High density is not the sole factor influencing QHS orientation

## Abstract

We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left < 1\bar{1}0 \right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along $\left < 110 \right >$ direction and can be reoriented only perpendicular to $B_{||}$. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to $B_{||}$, while quantum confinement of the 2DEG likely plays an important role.