Dirac Fermion Quantum Hall Antidot in Graphene

TL;DR

This paper demonstrates a graphene-based Dirac fermion quantum Hall antidot capable of localizing quasiparticles, with tunable charge transport properties and high-temperature stability, offering a promising platform for quantum computing applications.

Contribution

It introduces a graphene quantum Hall antidot with controllable coupling regimes and high-temperature operation, advancing quantum device development.

Findings

Observation of Coulomb blockade and resonant tunneling regimes.

Conductance oscillations persist at temperatures over 200 K.

Potential for quantum circuit applications in quantum simulation and computation.

Abstract

The ability to localize and manipulate individual quasiparticles in mesoscopic structures is critical in experimental studies of quantum mechanics and thermodynamics, and in potential quantum information devices, e.g., for topological schemes of quantum computation. In strong magnetic field, the quantum Hall edge modes can be confined around the circumference of a small antidot, forming discrete energy levels that have a unique ability to localize fractionally charged quasiparticles. Here, we demonstrate a Dirac fermion quantum Hall antidot in graphene in the integer quantum Hall regime, where charge transport characteristics can be adjusted through the coupling strength between the contacts and the antidot, from Coulomb blockade dominated tunneling under weak coupling to the effectively non-interacting resonant tunneling under strong coupling. Both regimes are characterized by single -flux and -charge oscillations in conductance persisting up to temperatures over 2 orders of magnitude higher than previous reports in other material systems. Such graphene quantum Hall antidots may serve as a promising platform for building and studying novel quantum circuits for quantum simulation and computation.