Interfacial mechanism in the anomalous Hall effect of Co/Bi$_2$O$_3$ bilayers

TL;DR

This study investigates how the Bi₂O₃ interface influences the anomalous Hall effect in Co/Bi₂O₃ bilayers, revealing a significant 40% variation due to interface-induced asymmetric transport affecting skew scattering.

Contribution

It provides experimental evidence of the Bi₂O₃ interface's role in modifying the anomalous Hall effect in Co, highlighting an additional interface-driven asymmetric transport mechanism.

Findings

40% variation in AHE with Bi₂O₃ capping

Interface contributes to asymmetric transport

Skew scattering is affected by the interface

Abstract

Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi$_2$O$_3$ bilayers that originates from the Co/Bi$_2$O$_3$ interface and contributes to the skew scattering.