# From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films

## TL;DR

This study investigates the atomistic structure, ferroelectric properties, and electronic behavior of SnTe films from 2 to 40 atomic layers, revealing how their properties evolve from monolayer to bulk.

## Contribution

It provides a detailed analysis of the ferroelectric coupling and electronic structure of SnTe films across different thicknesses, bridging the understanding from atomic layers to bulk material.

## Key findings

- 4 AL SnTe films are antiferroelectrically coupled
- Thicker SnTe films are ferroelectrically coupled
- Electronic band gap decreases with thickness but remains open

## Abstract

SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.