# Spin-charge coupled transport in van der Waals systems with random tunneling

## TL;DR

This paper investigates how random interlayer tunneling in van der Waals heterostructures induces spin-charge coupled transport, especially in layers without intrinsic spin-orbit coupling, with potential tunability via doping.

## Contribution

It reveals two mechanisms for spin-charge coupling in such systems and demonstrates tunable spin transport effects in a 2DEG-topological insulator heterostructure.

## Key findings

- Hybridization of diffusion modes induces spin-charge coupling.
- Random tunneling generates effective spin-orbit coupling.
- Doping controls the spin-charge coupling strength.

## Abstract

We study the electron and spin transport in a van der Waals system formed by one layer with strong spin-orbit coupling and a second layer without spin-orbit coupling, in the regime when the interlayer tunneling is random. We find that in the layer without intrinsic spin-orbit coupling spin-charge coupled transport can be induced by two distinct mechanisms. First, the gapless diffusion modes of the two isolated layers hybridize in the presence of tunneling, which constitutes a source of spin-charge coupled transport in the second layer. Second, the random tunneling introduces spin-orbit coupling in the effective disorder-averaged single-particle Hamiltonian of the second layer. This results in non-trivial spin transport and, for sufficiently strong tunneling, in spin-charge coupling. As an example, we consider a van der Waals system formed by a two-dimensional electron gas (2DEG)--such as graphene--and the surface of a topological insulator (TI) and show that the proximity of the TI induces a coupling of the spin and charge transport in the 2DEG. In addition, we show that such coupling can be tuned by varying the doping of the TI's surface. We then obtain, for a simple geometry, the current-induced non-equilibrium spin accumulation (Edelstein effect) caused in the 2DEG by the coupling of charge and spin transport.