Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk
Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin, Helena Silva, Ali, Gokirmak

TL;DR
This paper proposes a novel multi-contact phase change device that uses thermal crosstalk and amorphization to perform toggle operations, enabling compact, non-volatile logic functions integrated with CMOS for advanced memory and computing.
Contribution
It introduces a new phase change device concept with toggle functionality using thermal crosstalk and amorphization, reducing footprint and integrating logic within memory layers.
Findings
Device can operate as a toggle flip-flop with 5 transistors
Achieves ~50% smaller footprint than CMOS counterparts
Demonstrates potential for integrated memory and logic functions
Abstract
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide materials such as Ge2Sb2Te5 (GST). In addition to being used as a standalone memory, there has been a growing interest in integration of PCM devices on top of the CMOS layer for computation in memory and neuromorphic computing. The large CMOS overhead for memory controllers is a limiting factor for this purpose. Transferring functionality like routing, multiplexing, and logic to the memory layer can substantially reduce the CMOS overhead, making it possible to integrate 100s of GB of PCM storage on top of a conventional CPU. In this work, we present computational analysis of a phase change device concept that can perform toggle operations. The toggle…
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