# On dynamical localization corrections to band transport

## TL;DR

This paper develops a unified theoretical framework that incorporates dynamical localization corrections to band transport, improving understanding of charge diffusion in organic semiconductors with varying disorder levels.

## Contribution

It introduces a comprehensive model bridging transient localization and band transport theories, addressing dynamical disorder effects in organic semiconductors.

## Key findings

- Transport phase diagram for high-mobility organic semiconductors
- Identification of dynamical localization corrections
- Unified theory connecting localization and band transport

## Abstract

Bloch-Boltzmann transport theory fails to describe the carrier diffusion in current crystalline organic semiconductors, where the presence of large-amplitude thermal molecular motions causes substantial dynamical disorder. The charge transport mechanism in this original situation is now understood in terms of a transient localization of the carriers' wavefunctions, whose applicability is however limited to the strong disorder regime. In order to deal with the ever-improving performances of new materials, we develop here a unified theoretical framework that includes transient localization theory as a limiting case, and smoothly connects with the standard band description when molecular disorder is weak. The theory, which specifically adresses the emergence of dynamical localization corrections to semiclassical transport, is used to determine a "transport phase diagram" of high-mobility organic semiconductors.