# Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

## TL;DR

This paper demonstrates a novel photo-electrical method for detecting and controlling defect spins in 4H-SiC at room temperature, offering a scalable and efficient alternative to fluorescence-based readout in quantum technology.

## Contribution

It introduces a new electrical readout technique for defect spins in 4H-SiC that operates at ambient conditions, enhancing scalability and practicality for quantum devices.

## Key findings

- Electrical detection of silicon vacancy spins achieved
- Coherent spin control demonstrated at room temperature
- Potential for scalable quantum device integration

## Abstract

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.