Nanostructure phase and interface engineering via controlled Au self-assembly on GaAs(001) surface
Arkadiusz Janas, Benedykt R. Jany, Konrad Szajna, Alexandr Kryshtal,, Grzegorz Cempura, Adam Kruk, Franciszek Krok

TL;DR
This study explores how temperature controls the morphology, composition, and phase of gold nanostructures self-assembled on GaAs(001), revealing precise manipulation of nanostructure properties through thermal regulation.
Contribution
It demonstrates temperature-dependent control over nanostructure phase, interface, and size during Au self-assembly on GaAs(001), with detailed analysis of growth mechanisms and energetics.
Findings
Formation of pure Au nanoislands below 798 K
Growth of AuGa phase at approximately 798 K
Development of AuGa2 alloy nanostructures at higher temperatures
Abstract
We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels. It has been found that the deposition of 2 ML of Au at a substrate temperature lower than 798 K leads to the formation of pure Au nanoislands. For the deposition at a substrate temperature of about 798 K the nanostructures of the stoichiometric AuGa phase were/had been grown. Gold deposition at higher substrate temperatures results in the formation of octagonal nanostructures composed of an AuGa2 alloy. We have proved that the temperature-controlled efficiency of Au-induced etching-like of the GaAs substrate follows in a layer-by-layer manner leading to the enrichment of the substrate surface in gallium. The excess Ga together with Au forms liquid…
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