# Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides

## TL;DR

This study investigates how Se substitution in LaOBiS$_{2-x}$Se$_x$ improves thermoelectric performance by suppressing local distortions and altering electronic structure, offering a new approach to optimize thermoelectric materials.

## Contribution

It demonstrates that controlling local crystal structure via Se substitution enhances thermoelectric properties in bismuth-chalcogenides.

## Key findings

- Se substitution suppresses local distortion
- Increased carrier mobility observed
- Electronic structure is altered by Se doping

## Abstract

Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS$_{2-x}$Se$_x$ thermoelectric material. It is found that Se substitution effectively suppresses local distortion, that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.