# Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

## TL;DR

This paper reports the development of a broadband, polarization-sensitive photodetector using a TiS3/Si p-n junction, demonstrating high responsivity, polarization discrimination, and fast response, suitable for advanced optical systems.

## Contribution

It introduces a novel monolithic TiS3/Si p-n junction device that combines broadband detection with polarization sensitivity, advancing optoelectronic applications.

## Key findings

- Responsivity up to 1050 nm wavelength
- Polarization sensitivity with 350% difference
- Fast response time and good detectivity

## Abstract

The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350 % and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization sensitive systems such as polarimeters.

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Source: https://tomesphere.com/paper/1903.11705