# High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures

## TL;DR

This study demonstrates that inserting a high-temperature-grown SrZrO$_3$ buffer layer significantly reduces threading dislocations and enhances electron mobility in La-doped BaSnO$_3$/SrZrO$_3$ heterostructures, achieving high room-temperature mobility.

## Contribution

The paper introduces a high-temperature-grown SrZrO$_3$ buffer layer technique to improve electron mobility in La:BaSnO$_3$ films by reducing dislocation density.

## Key findings

- Achieved 140 cm$^2$ V$^{-1}$s$^{-1}$ mobility at room temperature.
- Threading dislocation density reduced to $4.9\times 10^{9}$ cm$^{-2}$.
- Effective buffer layer improves film quality without post-growth treatment.

## Abstract

By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^{9}$ cm$^{-2}$ for buffered films prepared on (110) TbScO$_3$ substrates by pulsed laser deposition.