# The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

## TL;DR

This study investigates how electric fields influence the formation and periodicity of adatom nanostructures on GaAs surfaces under laser irradiation, revealing field-dependent changes in critical conditions and nanostructure periods.

## Contribution

It provides new insights into how electric field strength and direction affect the self-organization of adatom nanostructures on GaAs surfaces.

## Key findings

- Electric field alters the critical temperature for nanostructure formation.
- Electric field direction influences the period of surface nanostructures.
- Increased electric field strength causes monotonic changes in nanostructure period.

## Abstract

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in $n$-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads to an increase or decrease of the critical temperature (the critical concentration of adatoms), at which the formation of self-organized nanostructure is possible. It is shown that in strongly alloyed $n$-GaAs semiconductor, an increase of the electric field strength leads to a monotonous change (decrease or increase depending on the direction of the electric field) of the period of self-organized surface nanostructures of adatoms.