# Dark vertical conductance of cavity-embedded semiconductor heterostructures

## TL;DR

This paper develops a nonlocal linear-response theory to analyze how embedding semiconductor heterostructures in a cavity affects their dark vertical conductance, revealing cavity vacuum effects can significantly modify conductance.

## Contribution

It introduces a bosonic-based theoretical framework for calculating cavity-modified conductance in n-doped semiconductor heterostructures without illumination.

## Key findings

- Cavity vacuum effects can enhance or reduce conductance.
- The theory applies to general n-doped semiconductors with parabolic dispersion.
- Ground-state properties and polaritonic excitations influence conductance.

## Abstract

We present a linear-response nonlocal theory of the electronic conductance along the vertical (growth) direction of a semiconductor heterostructure embedded in a single-mode electromagnetic resonator in the absence of illumination. Our method readily applies to the general class of n-doped semiconductors with parabolic dispersion. The conductance depends on the ground-state properties and virtual collective polaritonic excitations that have been determined via a bosonic treatment in the dipole gauge. We show that, depending on the system parameters, the cavity vacuum effects can enhance or reduce significantly the dark vertical conductance with respect to the bare heterostructure.