Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals

TL;DR

This study investigates the complex magnetotransport properties of ZrTe5 crystals, revealing anisotropic Landau level splitting, Lifshitz transition effects, and potential for spintronics applications.

Contribution

It uncovers the 3D anisotropic Landau level splitting and Lifshitz transition-induced magnetoresistance enhancement in ZrTe5, advancing understanding of its electronic properties.

Findings

Observation of nontrivial small effective mass band via quantum oscillations

Identification of 3D anisotropic Landau level splitting

Detection of large magnetoresistance enhancement linked to Lifshitz transition

Abstract

Magneto-transport study has been performed in ZrTe5 single crystals. The observed Shubnikov-de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe5. Furthermore, we also revealed the 3D anisotropic nature of high-field Landau level splitting in ZrTe5, very different from the 2D behavior measured in previous transport studies. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe5. Our study provides more understanding of the physical properties of ZrTe5 and sheds light on potential application of ZrTe5 in spintronics.