Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

TL;DR

This paper demonstrates stable, reproducible quantized conductance states in resistive devices, enabling controlled multilevel memory with three levels of state manipulation through voltage and current regulation.

Contribution

It introduces a method for controlled inter-state switching among quantized conductance states in resistive memory devices, advancing multilevel memory technology.

Findings

Achieved stable and reproducible QC-states in resistive devices.

Demonstrated controlled switching among multiple QC-states.

Showed potential for multilevel memory implementation.

Abstract

A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/Niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC states to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well defined multiple QC-states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.