Ferroelectric multiple-valued logic units

TL;DR

This paper explores using ferroelectric materials to create multi-valued logic units, leveraging their multi-stable polarization states to enhance computing performance with novel system designs.

Contribution

It introduces two innovative ferroelectric-based approaches for implementing multi-valued logic units, expanding the potential for high-level logic circuit design.

Findings

Feasible multi-level polarization states in ferroelectric films and nano-samples

Designs for 3-, 4-, and 5-level logic units

Potential for improved computing circuit performance

Abstract

Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin the polarization as a sequence of multi-stable states. Two conceptual ideas are considered. As the first system, we suggest using the strained ferroelectric films that can host the polarization states, allowing the effective field-induced multilevel switching between them. As the second one, we propose to employ the ferroelectric nano-samples that confine the topologically protected polarization textures, which may be used as MVL structural elements. We demonstrate that these systems are suitable for engineering of the 3-, 4- and even 5-level logic units and consider the circuit design for such elements.