An In-situ Annealing effect of Graphene-Graphene Interlayer Conduction

TL;DR

This paper investigates how in-situ annealing affects interlayer conduction in twisted bilayer graphene, demonstrating modulation of resistance and potential for tunable electronic devices.

Contribution

It introduces an in-situ annealing method to modulate interlayer distance and conduction in twisted bilayer graphene, revealing effects of annealing and gas environment on interlayer resistance.

Findings

In-situ annealing removes residues and enhances interlayer conduction.

Interlayer resistance can be modulated by an order of magnitude at 5 K.

Hydrogen/argon ambient reduces interlayer conduction.

Abstract

An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2 surface is reported based on experimental results. Incoherent interlayer conduction is observed in the twisted bilayer device. In-situ annealing efficiently removes the residues in the graphene-to-graphene interface and enhances the interlayer conduction. We demonstrate graphene-to-graphene interlayer resistance modulated by an order of magnetite at 5 K. We also report on the behavior of molecular hydrogen on graphene interlayer using the gate voltage-dependent resistance as a function of temperature at atmospheric pressure. It was observed that interlayer conduction in hydrogen/argon gas ambient is reduced. Results imply that modulation in the interlayer distance of graphene-to-graphene junction, as determined by the transport measurement investigation. Overall this result leads to the possibility of making electrically tunable devices using twisted bilayer graphene.