# Role of remote interfacial phonons in the resistivity of graphene

## TL;DR

This study investigates how remote interfacial phonons from different substrates affect the temperature-dependent electrical resistivity of graphene, revealing substrate-dependent scattering effects and implications for enhancing charge transport.

## Contribution

It provides experimental evidence linking substrate surface optical phonons to graphene resistivity behavior, highlighting the importance of substrate choice for improved charge transport.

## Key findings

- Resistivity shows linear T dependence at low T
- Resistivity becomes superlinear above a transition temperature
- Substrate type influences the resistivity transition temperature

## Abstract

The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.