# Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

## TL;DR

This paper presents a detailed theoretical analysis of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots, highlighting their unique direct and indirect transitions and potential for quantum information applications.

## Contribution

It provides a comprehensive ${f k} ext{ extendash} ext{ extendash}$p modeling of these quantum dots, comparing different substrates and exploring their suitability for quantum gates.

## Key findings

- Quantum dots exhibit both direct and indirect electronic transitions.
- Comparison between GaP and GaAs substrates shows differences in electronic structure.
- Potential application in quantum information technology and quantum gates.

## Abstract

Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In,Ga)As/GaAs dots. We proceed from the inspection of the confinement potentials for ${\bf k}\neq 0$ and ${\bf k}= 0$ conduction and ${\bf k}= 0$ valence bands, through the formulation of ${\bf k}\cdot{\bf p}$ calculations for ${\bf k}$-indirect transitions, up to the excitonic structure of $\Gamma$-transitions. Throughout this process we compare the results obtained for dots on both GaP and GaAs substrates enabling us to make a direct comparison to the (In,Ga)As/GaAs quantum dot system. We also discuss the realization of quantum gates.