# Velocity Dependent Dark Matter Interactions in Single-Electron Resolution Semiconductor Detectors with Directional Sensitivity

## TL;DR

This paper explores how velocity and momentum dependence of dark matter interactions influence signals in single-electron resolution semiconductor detectors, revealing daily modulation effects sensitive to dark matter properties.

## Contribution

It provides a detailed analysis of velocity and recoil momentum dependence in dark matter interactions and identifies conditions under which daily modulation signals can be observed in semiconductor detectors.

## Key findings

- Dark matter interactions cause daily modulation signals in specific mass ranges.
- The structure of modulation is sensitive to velocity and momentum dependence.
- Optimal mass ranges for observing these effects are identified.

## Abstract

We investigate the velocity and recoil momentum dependence of dark matter interactions with ordinary matter. In particular we focus on the single-electron resolution semiconductor detectors, which allow experimental assessment of sub-GeV dark matter masses. We find that, within a specific mass range depending on the detector material, the dark matter interactions result in a signal characterized by daily modulation. Furthermore, we find that the detailed structure of this modulation is sensitive to the velocity and momentum dependence of dark matter interactions. We identify the optimal mass range for the prevalence of these effects.