InGaN/GaN {\mu}LED SPICE modelling with size dependent ABC model integration

TL;DR

This paper presents a SPICE model for InGaN/GaN {0}LEDs that incorporates size-dependent ABC modeling and a statistical approach to accurately simulate their electro-optical behavior for high-brightness micro-displays.

Contribution

It introduces a novel size-dependent ABC model integrated into SPICE for {0}LEDs, including a method to estimate quantum efficiency and account for experimental variability.

Findings

Accurate simulation of {0}LED electrical and optical behavior.

Inclusion of size effects and statistical variability improves model robustness.

Facilitates design of reliable pixel driving circuits for micro-displays.

Abstract

The need of high brightness micro-displays in portable applications dedicated to mixed and/or virtual reality has drawn an important research wave on InGaN/GaN based micro-sized light emitting diodes ({\mu}LEDs). We propose to use a SPICE modelling technique to describe and simulate the electro-optical behavior of the {\mu}LED. A sub-circuit portrayal of the whole device will be used to describe current-voltage behavior and the optical power performance of the device based on the ABC model. We suggest an innovative method to derive instantaneously the carrier concentration from the simulated electrical current in order to determine the {\mu}LED quantum efficiency. In a second step, a statistical approach is also added into the SPICE model in order to apprehend the spread on experimental data. This {\mu}LED SPICE modelling approach is very important to allow the design of robust pixel driving circuits.