# Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

## TL;DR

This paper demonstrates high-efficiency thermoelectric conversion at 30K using InAs/InP nanowire quantum dots, highlighting the role of multi-level electronic heat transport and achieving a ZT of approximately 35.

## Contribution

The study introduces a theoretical and experimental approach to evaluate thermoelectric performance in quantum dots without relying on co-tunnelling estimates, emphasizing multi-level heat transport.

## Key findings

- Achieved ZT ~ 35 at 30 K indicating high thermoelectric efficiency.
- Validated a model that accurately reproduces conductance and thermopower measurements.
- Demonstrated the dominance of multi-level heat transport in electronic thermal conductance.

## Abstract

We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit.