Theoretical realization of two-dimensional M3(C6X6)2(M= Co, Cr, Cu, Fe, Mn, Ni, Pd, Rh and X= O, S, Se) metal-organic frameworks

TL;DR

This paper uses first-principles simulations to explore the stability, mechanical, electronic, and magnetic properties of a new family of 2D metal-organic frameworks, expanding their potential for advanced nanodevices.

Contribution

It provides a theoretical analysis of M3(C6X6)2 monolayers, demonstrating their stability and diverse electronic and magnetic properties, which were previously unexplored.

Findings

All structures are thermally stable above 1500 K.

Structures exhibit high tensile strength and elasticity.

Electronic properties vary from semiconducting to metallic and half-metallic.

Abstract

Most recently, Cu-hexahydroxybenzene MOF was for the time experimentally realized, through a kinetically controlled approach. Cu-HHB belongs to the family of conductive MOFs with a chemical formula of M3(C6X6)2(X=NH, O, S). Motivated by the recent experimental advance in the fabrication of Cu-HHB, we conducted extensive first-principles simulations to explore the thermal stability, mechanical properties and electronic characteristics of M3(C6X6)2(M= Co, Cr, Cu, Fe, Mn, Ni, Pd, Rh and X= O, S, Se) monolayers. First-principles results confirm that all considered 2D porous lattices are thermally stable at high temperatures over 1500 K. It was moreover found that these novel 2D structures can exhibit linear elasticity with considerable tensile strengths, revealing their suitability for practical applications in nanodevices.Depending on the metal and chalcogen atoms in M3(C6X6)2 monolayers, they can yield various electronic and magnetic properties, such as; magnetic semiconducting, perfect half metallic, magnetic and nonmagnetic metallic behaviours. This work highlights the outstanding physics of M3(C6X6)2 2D porous lattices and will hopefully help to expand this conductive MOF family, as promising candidates to design advanced energy storage/conversion, electronics and spintronics systems.