# Growth and Magnetotransport in Thin Film {\alpha}-Sn on CdTe

## TL;DR

This study reports the growth and detailed magnetotransport characterization of epitaxial {\

## Contribution

It demonstrates the successful growth of {\

## Key findings

- Identification of a transition to metallic behavior at low temperature
- Observation of large magnetoresistance and quantum oscillations
- Detection of a parallel p-type dopant channel with high carrier density

## Abstract

We report growth and characterization of epitaxial $\alpha$-Sn thin films grown on CdTe(111)B. Noninvasive techniques verify the film's pseduomorphic growth before fabrication of magnetotransport devices, overcoming ex-situ obstacles on uncapped films for measurement in the Hall bar geometry. We identify a transition to metallic behavior at low temperature with large magnetoresistance, high mobility, and quantum oscillations tentatively suggesting an n-type Dirac semimetallic channel. A parallel p-type dopant channel with high carrier density is seen to dominate at thinner film thicknesses. Careful preparation of the CdTe surface before growth is considered crucial to attain a low dopant density and accessible topological states on an insulating substrate.