Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
A. Geremew, S. Rumyantsev, F. Kargar, B. Debnath, A. Nosek, M., Bloodgood, M. Bockrath, T. Salguero, R. K. Lake, and A. A. Balandin

TL;DR
This study demonstrates electric-field induced switching among multiple charge-density-wave phases and the normal metallic phase in 1T-TaS2 thin films over a wide temperature range, highlighting the role of Joule heating and noise spectroscopy in phase transition analysis.
Contribution
It introduces a method to electrically switch between multiple phases in 1T-TaS2 thin films and uses noise spectroscopy to monitor these phase transitions.
Findings
Electric switching among four phases achieved from 77 K to 400 K.
Noise spectral density increases sharply at phase transition points.
Joule heating is identified as the dominant mechanism for phase transitions.
Abstract
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of…
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