# Electrical control of spin mixing conductance in a Y$_3$Fe$_5$O$_{12}$/Platinum bilayer

## TL;DR

This study demonstrates that applying a gate voltage via ionic gating can precisely tune the spin mixing conductance, spin pumping, and spin Hall angle in a YIG/Pt bilayer, highlighting the importance of interfacial charge density in spin transport.

## Contribution

It introduces a method to electrically control spin transport properties in YIG/Pt bilayers using ionic gating, a novel approach for spintronic device tuning.

## Key findings

- Spin mixing conductance tunable up to ±22% with gate voltage.
- Spin Hall angle in Pt layer tunable up to ±13.6%.
- Gate-dependent ferromagnetic resonance line width observed.

## Abstract

We report a tunable spin mixing conductance, up to $\pm 22\%$, in a Y${}_{3}$Fe${}_{5}$O${}_{12}$/Platinum (YIG/Pt) bilayer.This control is achieved by applying a gate voltage with an ionic gate technique, which exhibits a gate-dependent ferromagnetic resonance line width. Furthermore, we observed a gate-dependent spin pumping and spin Hall angle in the Pt layer, which is also tunable up to $\pm$ 13.6\%. This work experimentally demonstrates spin current control through spin pumping and a gate voltage in a YIG/Pt bilayer, demonstrating the crucial role of the interfacial charge density for the spin transport properties in magnetic insulator/heavy metal bilayers.