# Performance of Irradiated RD53A 3D Pixel Sensors

## TL;DR

This paper evaluates the performance of irradiated 3D silicon pixel sensors with small pixel sizes, demonstrating their radiation hardness and efficiency for use in the HL-LHC inner tracker upgrade.

## Contribution

It presents beam test results of irradiated 3D pixel sensors with small pixel sizes compatible with the RD53A chip, showing their effectiveness after high radiation exposure.

## Key findings

- Achieved 97% hit efficiency at 50 V after irradiation
- Demonstrated radiation hardness of 3D sensors up to 5×10^15 n_eq/cm^2
- Small pixel sensors suitable for HL-LHC inner tracker

## Abstract

The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D sensors with a small pixel size of $\mathrm{50 \times 50~\mu m^{2}}$ and $\mathrm{25 \times 100~\mu m^{2}}$ compatible with the first prototype ASIC for the HL-LHC, the RD53A chip, have been studied in beam tests after uniform irradiation to $\mathrm{5 \times 10^{15}~n_{eq}/cm^{2}}$. An operation voltage of only 50 V is needed to achieve a 97% hit efficiency after this fluence.