A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors

TL;DR

This paper critically reviews recent advancements in negative capacitance field-effect transistors (NC-FETs), discussing their potential, challenges, and the ongoing debates about their physical validity and practical reliability.

Contribution

It offers a comprehensive analysis of recent progress in NC-FET research and highlights key issues and future directions for the field.

Findings

Debates on the validity of quasi-static negative capacitance.

Concerns about frequency and reliability limits of NC-FETs.

Potential broad impacts on device physics and technology development.

Abstract

The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance field effect transistor (NC-FET). Although hundreds of papers have been published, the validity of quasi-static NC and the frequency-reliability limits of NC-FET are still being debated. The concept of NC - if conclusively demonstrated - will have broad impacts on device physics and technology development. Here, the authors provide a critical review of recent progress on NC-FETs research and some starting points for a coherent discussion.