# Layertronic control of topological states in multilayer metal-organic frameworks

## TL;DR

This paper explores how external electric fields can control the localization of topological states in multilayer metal-organic frameworks, revealing new ways to tune electronic properties for materials design.

## Contribution

It introduces a method to control layer localization of topological states in multilayer MOFs using electric fields, combining DFT and tight-binding models.

## Key findings

- Electric fields can tune electronic state localization in multilayer MOFs.
- Discovery of a V-gutter Dirac state in infinite stacked nanoribbons.
- Layer localization adds a new degree of freedom in materials design.

## Abstract

We investigate the layer localization control of two-dimensional states in multilayer metal-organic frameworks (MOFs). For finite stackings of (NiC4S4)3 MOFs, the weak van der Waals coupling between adjacent layers leads to a Fermi level dependent distribution of the electronic states in the monolayers. Such distribution is reflected in the topological edge states of multilayer nanoribbons. Moreover, by applying an external electric field, parallel to the stacking direction, the spacial localization of the electronic states can be controlled for a chosen Fermi energy. This localization behavior is studied comparing density functional theory calculations with a kagome lattice tight-binding model. Furthermore, for infinite stacked nanoribbons, a new V-gutter Dirac state is found in the side surfaces, which allows anisotropic current control by tuning the Fermi energy. Our results can be immediately extended to other kagome MOFs with eclipsed stackings, introducing a new degree of freedom (layer localization) to materials design.