# Full electrostatic control of quantum interference in an extended trenched Josephson junction

## TL;DR

This paper demonstrates precise electrostatic control of quantum interference in a hybrid superconductor/semiconductor device, enabling tunable transition between SQUID-like and Fraunhofer-like behaviors without magnetic fields.

## Contribution

It introduces a novel device geometry with independent side-gates allowing full electrostatic modulation of interference patterns in a Josephson junction.

## Key findings

- Achieved full electrostatic control of interference pattern.
- Demonstrated transition from SQUID-like to Fraunhofer-like behavior.
- Validated results with a theoretical model of an extended tunnel Josephson junction.

## Abstract

Hybrid semiconductor/superconductor devices constitute an important platform for a wide range of applications, from quantum computing to topological-state-based architectures. Here, we demonstrate full modulation of the interference pattern in a superconducting interference device with two parallel islands of ballistic InAs quantum wells separated by a trench, by acting independently on two side-gates. This so far unexplored geometry enables us to tune the device with high precision from a SQUID-like to a Fraunhofer-like behavior simply by electrostatic gating, without the need for an additional in-plane magnetic field. These measurements are successfully analyzed within a theoretical model of an extended tunnel Josephson junction, taking into account the focusing factor of the setup. The impact of these results on the design of novel devices is discussed.