Strong Modulation of Optical Properties in Rippled 2D GaSe via Strain Engineering

TL;DR

This study demonstrates significant modulation of optical properties in rippled 2D GaSe nanosheets through strain engineering, achieving up to 1.2 eV shifts in the optical band-edge, supported by experimental and theoretical analysis.

Contribution

It introduces a method to control the optical properties of 2D GaSe via strain in rippled structures, combining experimental observations with density functional theory calculations.

Findings

Optical band-edge shifts up to 1.2 eV due to strain

Rippled GaSe exhibits periodic compressive and tensile strain

Theoretical DFT results support experimental observations

Abstract

Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculations performed for monolayers and multilayers (up to 7 layers) under tensile and compressive strain. This large band gap tunability can be explained through a combined analysis of the elastic response of Ga atoms to strain and the symmetry of the wave functions.