# Gapped Topological Kink States and Topological Corner States in Graphene

## TL;DR

This paper demonstrates the existence and control of gapped topological kink and corner states in graphene through theoretical calculations and photonic experiments, revealing potential for topological quantum devices.

## Contribution

It introduces the concept of gapped topological kink and corner states in graphene induced by domain walls, with experimental visualization and manipulation methods.

## Key findings

- Gapped topological kink states can be induced by sublattice symmetry breaking or lattice deformation.
- Intersection of domain walls creates localized topological corner states.
- Graphene can host multiple controllable topological corner modes.

## Abstract

Based on the tight-binding model calculations and photonic experimental visualization on graphene, we report the domain-wall-induced gapped topological kink states and topological corner states. In graphene, domain walls with gapless topological kink states could be induced either by sublattice symmetry breaking or by lattice deformation. We find that the coexistence of these two mechanisms will induce domain walls with gapped topological kink states. Significantly, the intersection of these two types of domain wall gives rise to topological corner state localized at the crossing point. Through the manipulation of domain walls, we show graphene not only a versatile platform supporting multiple topological corner modes in a controlled manner, but also possessing promising applications such as fabricating topological quantum dots composed of gapped topological kink states and topological corner states.