A Computational Phase Field Study of Conducting Channel Formation in Dielectric Thin Films: A View Towards the Physical Origins of Resistive Switching

TL;DR

This paper employs a phase field computational approach to model the formation of conducting channels in dielectric thin films, providing insights into the physical origins of resistive switching without relying on prior assumptions.

Contribution

It introduces a novel phase field method that predicts conducting channel morphology in resistive switching devices without pre-assumed structures or mechanisms.

Findings

Successfully predicts conducting channel formation

Aligns with experimental resistive switch behaviors

Offers an atomistic metastable state modeling approach

Abstract

A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering an alternative computational formulation based on metastable states treated at the atomic scale. In contrast to previous resistive switching thin film models, our formulation makes no a priori assumptions on conducting channel morphology and its fundamental transport mechanisms.