Room temperature Silicon detector for IR range coated with Ag2S Quantum Dots

TL;DR

This paper introduces a novel silicon-based IR detector enhanced with Ag2S quantum dots, extending its photoresponse into the infrared range for potential technological and fundamental applications.

Contribution

The study demonstrates a new method of using Ag2S quantum dots on silicon to create impurity states, effectively extending silicon's IR photoresponse.

Findings

Enhanced IR photoresponse of silicon achieved

Quantum dots create impurity states in silicon band gap

Potential for advanced silicon IR detectors

Abstract

We present an elegant and effective technology of extending the photoresponse of Si towards the IR range. Our approach is based on the use of Ag2S quantum dots planted on the surface of Si to create impurity states in Si band gap. Given the variety of available QDs and the ease of extending the photoresponse of Si towards the IR range, our findings open a path towards the future study and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics of the IR range.