# Observation of highly dispersive bands in pure thin film C$_{60}$

## TL;DR

This study reports the direct observation of highly dispersive valence bands in pure thin film C$_{60}$ on a topological insulator substrate, using ARPES and first-principles calculations, revealing new insights into its electronic structure.

## Contribution

The paper demonstrates the first direct observation of highly dispersive valence bands in pure thin film C$_{60}$ on Bi$_{2}$Se$_{3}$, highlighting the substrate's role in reducing rotational disorder.

## Key findings

- Dispersive bands of 330-520 meV observed in C$_{60}$ thin films.
- Use of Bi$_{2}$Se$_{3}$ substrate reduces rotational disorder.
- Implications for C$_{60}$ electronic devices and heterostructures.

## Abstract

While long-theorized, the direct observation of multiple highly dispersive C$_{60}$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. Here we report a realization of multiple highly dispersive (330-520 meV) valence bands in pure thin film C$_{60}$ on a novel substrate--the three-dimensional topological insulator Bi$_{2}$Se$_{3}$--through the use of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The effects of this novel substrate reducing C$_{60}$ rotational disorder are discussed. Our results provide important considerations for past and future band structure studies as well as the increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures.