Possible Realization and Protection of Valley-Polarized Quantum Hall Effect in Mn/WS2

TL;DR

This paper demonstrates that defected Mn/WS2 monolayers can exhibit a significant valley spin splitting and valley-polarized quantum Hall effects, which can be protected by a BN layer, enabling valley physics exploration without optical methods.

Contribution

It introduces a novel Mn/WS2 system with tunable valley polarization and protection mechanisms, advancing valleytronic applications.

Findings

Valley spin splitting up to 210 meV in Mn/WS2

Potential for valley-polarized anomalous Hall effect

Protection of properties with BN layer

Abstract

By using the first-principles calculations and model analyses, we found that the combination of defected tungsten disulfide monolayer and sparse manganese adsorption may give a KK` valley spin splitting up to 210 meV. This system also has a tunable magnetic anisotropy energy, a clean band gap, and an appropriate band alignment, with the Fermi level sitting right above the top of valence bands at the K-valleys. Therefore, it can be used for the realization of the valley-polarized anomalous Hall effect and for the exploration of other valley related physics without using optical methods. A protective environment can be formed by covering it with a hexagonal BN layer, without much disturbance to the benign properties of Mn/WS2.