# Energy bandpass filtering in superlattice phase change memories

## TL;DR

This paper introduces energy bandpass filtering using anti-reflection heterostructures in superlattice phase change memories to reduce energy consumption and improve device scalability and reliability.

## Contribution

It demonstrates that anti-reflection units enhance ON/OFF ratios, lower RESET voltage, and maintain performance despite structural variations in superlattice PCM devices.

## Key findings

- ON/OFF ratio increased by an order of magnitude with anti-reflection units
- RESET voltage reduced by 32% in anti-reflection superlattice devices
- ON/OFF ratios are resilient to superlattice periodicity variations

## Abstract

We propose energy bandpass filtering employed using the idea of anti-reflection heterostructures as a means to reduce the energy requirements of a superlattice phase change memory based on GeTe and Sb$_{2}$Te$_{3}$ heterostructures. Different configurations of GeTe/Sb$_{2}$Te$_{3}$ superlattices are studied using the non-equilibrium Green's function approach. Our electronic transport simulations calculate the coupling parameter for the high resistance covalent state, to $97 \%$ that of the stable low resistance resonant state, maintaining the ON/OFF ratio of 100 for a reliable read operation. By examining various configurations of the superlattice structures we conclude that the inclusion of anti-reflection units on both sides of the superlattice increases the overall ON/OFF ratio by an order of magnitude which can further help in scaling down of the memory device. It is also observed that the device with such anti-reflection units exhibits 32$\%$ lesser RESET voltage than the most common PCM superlattice configurations and 27$\%$ in the presence of elastic dephasing. Moreover, we also find that the ON/OFF ratios in these devices are also resilient to the variations in the periodicity of the superlattice.