# Emergence of Flat-Band Magnetism and Half-Metallicity in Twisted Bilayer Graphene

## TL;DR

This study demonstrates that twisted bilayer graphene can exhibit flat-band magnetism and half-metallicity through external controls like doping, pressure, and electric fields, enabling tunable magnetic and electronic properties.

## Contribution

It reveals how external parameters can induce and control magnetism and half-metallicity in twisted bilayer graphene, a novel approach for electronic property engineering.

## Key findings

- Localized magnetic moments appear without disrupting structure
- Electric field switches magnetic order from ferromagnetic to anti-ferromagnetic
- Doping induces half-metallicity by shifting chemical potential

## Abstract

Evidence of flat-band magnetism and half-metallicity in compressed twisted bilayer graphene is provided with first-principles calculations. We show that dynamic band-structure engineering in twisted bilayer graphene is possible by controlling the chemical composition with extrinsic doping, the interlayer coupling strength with pressure, and the magnetic ordering with external electric field. By varying the rotational order and reducing the interlayer separation an unbalanced distribution of charge density resulting in the spontaneous apparition of localized magnetic moments without disrupting the structural integrity of the bilayer. Weak exchange correlation between magnetic moments is estimated in large unit cells. External electric field switches the local magnetic ordering from ferromagnetic to anti-ferromagnetic. Substitutional doping shifts the chemical potential of one spin distribution and leads to half-metallicity. Flakes of compressed twisted bilayer graphene exhibit spontaneous magnetization, demonstrating that correlation between magnetic moments is not a necessary condition for their formation.