# Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots

## TL;DR

This study reveals strong correlations between optical properties of GaAs quantum dots and their growth-related capture zone areas, enabling better control and preselection for quantum communication applications.

## Contribution

It demonstrates the applicability of the capture-zone model to low-density GaAs quantum dots and links optical properties to growth parameters.

## Key findings

- Optical properties correlate with capture zone area.
- Capture-zone model applies even at low QD densities.
- Preselection of QDs based on optical properties is possible.

## Abstract

A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over $\mu$m-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.