# Low temperature (< 200{\deg}C) solution processed tunable flash memory device without tunneling and blocking layer

## TL;DR

This paper presents a low-temperature solution-processed flash memory device that eliminates the need for tunneling and blocking layers by leveraging high intrinsic charge traps and low leakage current in inorganic dielectric films heated at 200°C or below.

## Contribution

It introduces a novel tunable flash memory device fabricated at low temperatures without tunneling and blocking layers, utilizing high trap density and low leakage in inorganic dielectric films.

## Key findings

- Achieved high intrinsic charge trap density (>10^12 cm^-2)
- Demonstrated low leakage current (<10^-7 A.cm^-2)
- Memory storage tunable up to 96% with heating temperature

## Abstract

Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is a challenge to create intrinsic traps in the dielectric layer without high temperature processing steps. While low temperature processed memory devices fabricated from polymers have been demonstrated as an alternative, their performance degrade rapidly after a few cycles of operation. Moreover conventional memory devices need the support of tunneling and blocking layers since the memory dielectric or polymer is incapable of preventing memory leakage. The main issue in designing a memory device is to optimize the leakage current and intrinsic trap density simultaneously. Here we report a tunable flash memory device without tunneling and blocking layer by combining the discovery of high intrinsic charge traps ($>$10$^{12}$ cm$^{-2}$) together with low leakage current($<$10$^{-7}$ A.cm$^{-2}$) in solution derived, inorganic, spin$-$coated dielectric films which were heated at 200$^\circ$C or below. In addition, the memory storage is tuned systematically upto 96% by controlling the trap density with increasing heating temperature.