# Controllable dispersion of domain wall movement in antiferromagnetic thin films at finite temperatures

## TL;DR

This paper presents a theoretical study on controlling the dispersion of domain wall movement in antiferromagnetic thin films at finite temperatures, highlighting how electrical tuning of current can manage positional variability for applications like probabilistic computing.

## Contribution

It introduces a stochastic model for domain wall dynamics considering thermal fluctuations and demonstrates electrical control over the dispersion of domain wall positions.

## Key findings

- Dispersion in domain wall position can be electrically controlled.
- The standard deviation of domain wall movement is tunable.
- The average domain wall position remains unaffected by thermal fluctuations.

## Abstract

The dynamics of a 90$^{\circ }$ domain wall in an antiferromagnetic nanostrip driven by the current-induced spin-orbital torque are theoretically examined in the presence of random thermal fluctuations. A soliton-type equation of motion is developed on the basis of energy balance between the driving forces and dissipative processes in terms of the domain wall velocity. Comparison with micromagnetic simulations in the deterministic conditions shows good agreement in both the transient and steady-state transport. When the effects of random thermal fluctuations are included via a stochastic treatment, the results clearly indicate that the dispersion in the domain wall position can be controlled electrically by tailoring the strength and duration of the driving current mediating the spin orbital torque in the antiferromagnet. More specifically, the standard deviation of the probability distribution function for the domain wall movement can be tuned widely while maintaining the average position unaffected. Potential applications of this unusual functionality include the probabilistic computing such as Bayesian learning.