# New insights into the electron trapping mechanism in LaAlO_3 / SrTiO3 heterostructures

## TL;DR

This study combines experimental and theoretical methods to uncover that electron trapping in LaAlO3/SrTiO3 heterostructures is due to oxygen vacancy electromigration, challenging previous thermal escape explanations and highlighting its universality.

## Contribution

It introduces a new mechanism involving oxygen vacancy electromigration for electron trapping, supported by combined magnetotransport and self-consistent calculations.

## Key findings

- Trapped electrons decay exponentially away from the interface.
- Fermi level remains within the quantum well despite trapping.
- Electromigration of oxygen vacancies explains trapping, not thermal escape.

## Abstract

In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an exponentially decaying spatial distribution away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen our conclusion that the thermal escape mechanism is not valid. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3. Our work indicates that electron trapping is a universal phenomenon in SrTiO3-based two-dimensional electron systems.