# Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping

## TL;DR

This paper introduces a new electron Bessel beam diffraction technique for nanoscale strain mapping that achieves high sensitivity and accuracy, offering a simple and effective alternative to existing methods.

## Contribution

The paper presents a novel diffraction-based method using electron Bessel beams for precise nanoscale strain measurement, outperforming current techniques in sensitivity and accuracy.

## Key findings

- Strain sensitivity better than 2.5 x 10^-4
- Strain measurement accuracy of 1.5 x 10^-3
- Method is simple and easy to implement

## Abstract

Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with sub-nanometer resolution. Here we present a novel method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than $2.5 \cdot 10^{-4}$ and an accuracy of $1.5 \cdot 10^{-3}$, competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup.