Absolute energy level positions in tin and lead based halide perovskites
Shuxia Tao, Ines Schmidt, Geert Brocks, Junke Jiang, Ionut Tranca,, Klaus Meerholz, and Selina Olthof

TL;DR
This paper systematically characterizes the energy levels of tin and lead halide perovskites, revealing how atomic properties and lattice structure influence their electronic properties, aiding the design of better optoelectronic devices.
Contribution
It provides the first comprehensive analysis of ionization energy and electron affinity in tin and lead perovskites, linking energy levels to atomic and structural factors.
Findings
Energy levels are mainly determined by metal cation and halide anion atomic levels.
Cation-anion interaction strength affects secondary energy level variations.
Results enable rational design of perovskite-based optoelectronic devices.
Abstract
Metal-halide perovskites are promising materials for future optoelectronic applications. One intriguing property, important for many applications, is the tunability of the band gap via compositional engineering. While experimental reports on changes in absorption or photoluminescence show rather good agreement for wide variety of compounds, the physical origins of these changes, namely the variations in valence band and conduction band positions, are not well characterized. Knowledge of these band positions is of importance for optimizing the energy level alignment with charge extraction layers in optoelectronic devices. Here, we determine ionization energy and electron affinity values of all primary tin and lead based perovskites using photoelectron spectroscopy data, supported by first-principles calculations. Through analysis of the chemical bonding, we characterize the key energy…
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