# Micromotion-Enhanced Fast Entangling Gates For Trapped Ion Quantum Computing

## TL;DR

This paper demonstrates that designing fast entangling gates to account for RF-induced micromotion in trapped ion systems can significantly improve gate fidelity, enabling scalable quantum computing architectures.

## Contribution

It introduces a method to incorporate micromotion effects into the design of fast entangling gates, outperforming traditional approaches that neglect micromotion.

## Key findings

- Gates designed with micromotion considerations have higher fidelity.
- Micromotion effects amplify energy shifts, impacting gate performance.
- The approach is robust to realistic experimental errors.

## Abstract

RF-induced micromotion in trapped ion systems is typically minimised or circumvented to avoid off-resonant couplings for adiabatic processes such as multi-ion gate operations. Non-adiabatic entangling gates (so-called `fast gates') do not require resolution of specific motional sidebands, and are therefore not limited to timescales longer than the trapping period. We find that fast gates designed for micromotion-free environments have significantly reduced fidelity in the presence of micromotion. We show that when fast gates are designed to account for the RF-induced micromotion, they can, in fact, out-perform fast gates in the absence of micromotion. The state-dependent force due to the laser induces energy shifts that are amplified by the state-independent forces producing the micromotion. This enhancement is present for all trapping parameters and is robust to realistic sources of experimental error. This result paves the way for fast two-qubit entangling gates on scalable 2D architectures, where micromotion is necessarily present on at least one inter-ion axis.